1

Influence of carriers on the capacitance of p-n junctions with deep donors

Year:
1974
Language:
english
File:
PDF, 668 KB
english, 1974
4

Mobility of majority carriers in doped noncompensated silicon

Year:
1981
Language:
english
File:
PDF, 587 KB
english, 1981
5

Comment on ‘‘Effective-mass superlattice’’

Year:
1986
Language:
english
File:
PDF, 128 KB
english, 1986
6

As superlattices: A numerical study

Year:
1985
Language:
english
File:
PDF, 322 KB
english, 1985
8

Band structure and interband optical transitions in the sawtooth superlattice

Year:
1987
Language:
english
File:
PDF, 152 KB
english, 1987
9

Mobility of holes in p-type silicon determined by the self-consistent method

Year:
1984
Language:
english
File:
PDF, 618 KB
english, 1984
13

Optical transitions between higher levels in a quantum well in an electric field

Year:
1987
Language:
english
File:
PDF, 234 KB
english, 1987
15

Self-consistent evaluation of nonuniform superlattice parameters by the harmonic method

Year:
1983
Language:
english
File:
PDF, 442 KB
english, 1983
23

Proton dynamics in Rochelle salt

Year:
1981
Language:
english
File:
PDF, 223 KB
english, 1981
26

Levinson's theorem in semiconductor quantum dots

Year:
1992
Language:
english
File:
PDF, 212 KB
english, 1992
39

Electrical conductivity of doped semiconductors: the two-zone hybrid model approach

Year:
1991
Language:
english
File:
PDF, 305 KB
english, 1991
43

Levinson's theorem in a semiconductor quantum well

Year:
1992
Language:
english
File:
PDF, 233 KB
english, 1992
44

The einstein relation for two-dimensional strongly inverted layers

Year:
1981
Language:
english
File:
PDF, 309 KB
english, 1981
45

p-n transition capacitance

Year:
1971
Language:
english
File:
PDF, 731 KB
english, 1971
47

On the design of tunable quantum well infrared photodetectors

Year:
1988
Language:
english
File:
PDF, 249 KB
english, 1988
49

Analysis of the infrared plasma reflectivity minimum by a self-consistent method

Year:
1985
Language:
english
File:
PDF, 542 KB
english, 1985